document number: 89154 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 23-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dual high-voltage trench mos barrier schottky rectifier ultra low v f = 0.63 v at i f = 3 a v10150c, vi10150c vishay general semiconductor new product features ? trench mos schottky technology ? low forward voltage drop, low power losses ? high efficiency operation ? solder dip 275 c max. 10 s, per jesd 22-b106 ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to ie c 61249-2-21 definition typical applications for use in high frequency dc/dc converters, switching power supplies, freewheeling diodes, or-ing diode, and reverse battery protection. mechanical data case: to-220ab and to-262aa molding compound meets ul 94 v-0 flammabi lity rating base p/n-m3 - halogen-free, rohs compliant, and commercial grade base p/nhm3 - halogen-free, rohs compliant, and aec-q101 qualified terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 m3 suffix meets jesd 201 class 1a whisker test, hm3 suffix meets jesd 201 class 2 whisker test polarity: as marked mounting torque: 10 in-lbs maximum primary characteristics i f(av) 2 x 5.0 a v rrm 150 v i fsm 60 a v f at i f = 5 a 0.69 v t j max. 150 c pin 1 pin 2 pin 3 k vi10150c to-220ab v10150c 1 2 3 pin 1 pin 2 case pin 3 tmbs ? 1 k 2 3 to-262aa maximum ratings (t a = 25 c unless otherwise noted) parameter symbol v10150c vi10150c unit maximum repetitive pe ak reverse voltage v rrm 150 v maximum average forward rectified current (fig. 1) per device i f(av) 10 a per diode 5.0 peak forward surge current 8. 3 ms single ha lf sine-wave superimposed on ra ted load per diode i fsm 60 a voltage rate of change (rated v r ) dv/dt 10 000 v/s operating junction and storage temperature range t j , t stg - 55 to + 150 c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 89154 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 23-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 v10150c, vi10150c vishay general semiconductor new product notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width 40 ms note (1) aec-q101 qualified electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit instantaneous forward voltage per diode i f = 3 a t a = 25 c v f (1) 0.82 - v i f = 5 a 0.99 1.41 i f = 3 a t a = 125 c 0.63 - i f = 5 a 0.69 0.75 reverse current per diode v r = 100 v t a = 25 c i r (2) 0.5 - a t a = 125 c 0.5 - ma v r = 150 v t a = 25 c - 100 a t a = 125 c 1.0 10 ma thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol v10150c vi10150c unit typical thermal resistance per diode r jc 4.0 c/w ordering information (example) package preferred p/n unit weight (g) pac kage code base quantity delivery mode to-220ab v10150c-m3/4w 1.87 4w 50/tube tube to-262aa vi10150c-m3/4w 1.45 4w 50/tube tube to-220ab v10150chm3/4w (1) 1.87 4w 50/tube tube to-262aa vi10150chm3/4w (1) 1.45 4w 50/tube tube
document number: 89154 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 23-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 v10150c, vi10150c vishay general semiconductor new product ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - maximum forward current derating curve fig. 2 - forward power loss characteristics per diode fig. 3 - typical instantaneous forward characteristics per diode fig. 4 - typical reverse characteristics per diode fig. 5 - typical juncti on capacitance per diode fig. 6 - typical transient thermal impedance per diode case temperature (c) average forward rectified current (a) 12 10 0 0 25 50 75 100 125 150 175 resistive or inductive load mounted on specific heatsink 8 4 2 6 0 1 3 5 01 4 6 average forward current (a) average power loss (w) d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0.8 d = 1.0 3 2 4 5 2 d = t p /t t p t instan taneo us forward current (a) instantaneous forward voltage (v) 0 0.2 0.4 0.8 1.2 1.6 100 10 1 0.1 t a = 100 c t a = 25 c 0.6 1.0 t a = 150 c t a = 125 c 1.4 10 20 30 40 50 60 70 80 90 100 0.1 0.01 0.001 10 1 percent of rated peak reverse voltage (%) instantaneous reverse current (ma) t a = 150 c t a = 25 c t a = 100 c t a = 125 c 0.00001 0.0001 1000 10 000 0.1 1 10 100 reverse voltage (v) junction capacitance (pf) 10 100 t j = 25 c f = 1.0 mhz v sig = 50 mv p-p 10 1 0.01 0.1 1 10 100 t - pulse duration (s) transient thermal impedance (c/w) junction to case
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 89154 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 23-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 v10150c, vi10150c vishay general semiconductor new product package outline dimensions in inches (millimeters) to-220ab 0.113 (2.87) 0.103 (2.62) 0.370 (9.40) 0.360 (9.14) 0.415 (10.54) max. 0.635 (16.13) 0.625 (15.87) pi n 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) 0.205 (5.20) 0.195 (4.95) 0.035 (0.90) 0.028 (0.70) 0.154 (3.91) 0.148 (3.74) 1 3 2 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.145 (3.68) 0.135 (3.43) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.560 (14.22) 0.530 (13.46) 0.022 (0.56) 0.014 (0.36) 0.110 (2.79) 0.100 (2.54) 0.603 (15.32) 0.573 (14.55) to-262aa 0.401 (10.19) 0.381 (9.68) 0.185 (4.70) 0.175 (4.44) 0.055 (1.40) 0.045 (1.14) 0.110 (2.79) 0.100 (2.54) 0.350 (8.89) 0.330 (8.38) 0.560 (14.22) 0.530 (13.46) 0.022 (0.56) 0.014 (0.35) k 123 0.055 (1.40) 0.047 (1.19) 0.510 (12.95) 0.470 (11.94) pi n 0.411 (10.45) max. 0.250 (6.35) mi n . 30 (typ.) (ref.) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.104 (2.65) 0.096 (2.45) 0.057 (1.45) 0.045 (1.14) 0.160 (4.06) 0.140 (3.56) 0.950 (24.13) 0.920 (23.37)
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